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| SIGC100T60R3 IGBT Chip Features: * 600V Trench & Field Stop technology * low VCE(sat) * low turn-off losses * short tail current * positive temperature coefficient * easy paralleling This chip is used for: * power module Applications: * drives 3 C G E Chip Type SIGC100T60R3 VCE 600V IC 200A Die Size 9.73 x 10.23 mm2 Package sawn on foil Mechanical Parameter Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 9.73 x 10.23 ( 4.256 x 1.938 ) x 4 ( 4.256 x 2.356 ) x 4 1.615 x 0.817 99.5 70 150 126 Photoimide 3200 nm AlSiCu Ni Ag -system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500m 0.65mm ; max 1.2mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23C m mm mm2 Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 SIGC100T60R3 Maximum Ratings Parameter Collector-Emitter voltage, Tvj =25 C DC collector current, limited by Tvj max Pulsed collector current, tp limited by Tvj max Gate emitter voltage Junction temperature range Operating junction temperature Short circuit data 2) Symbol VCE IC Ic,puls VGE Tvj Tvj tSC Value 600 1) Unit V A A V C C s 600 20 -40 ... +175 -40...+150 6 I C , m a x = 400A, V C E , m a x = 600V Tvj 1 5 0 C VGE = 15V, VCC = 360V, Tvj = 150C Reverse bias safe operating area 2 ) (RBSOA) 1) 2) depending on thermal properties of assembly not subject to production test - verified by design/characterization Static Characteristic (tested on wafer), Tvj =25 C Parameter Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate-Emitter threshold voltage Zero gate voltage collector current Gate-Emitter leakage current Integrated gate resistor Symbol V(BR)CES VCEsat VGE(th) ICES IGES rG Conditions VGE=0V , IC= 4 mA VGE=15V, IC=200A IC=3.2mA , VGE=VCE VCE=600V , VGE=0V VCE=0V , VGE=20V 2 Value min. 600 1.05 5.0 1.45 5.8 1.85 6.5 10.1 600 A nA V typ. max. Unit Dynamic Characteristic (not subject to production test - verified by design / characterization), Tvj =25 C Parameter Input capacitance Output capacitance Reverse transfer capacitance Symbol Cies Coes Cres Conditions V C E =25V, VGE=0V, f=1MHz Value min. typ. 12335 769 366 pF max. Unit Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 SIGC100T60R3 Further Electrical Characteristic Switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die. Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 SIGC100T60R3 Chip Drawing E E E G E T E E E E E = Emitter pad G = Gate pad T = Test pad do not contact Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 SIGC100T60R3 Description AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883 Revision History Version 2.1 Subjects (major changes since last revision) Change max.possible chips per wafer Date 04.05.2010 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Edited by INFINEON Technologies, IMM PSD, L7601AA, Edition 2.1, 04.05.2010 |
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